Microscopic electroabsorption line shape analysis for Ga(AsSb)∕GaAs heterostructures-Reference-Cited by-同舟云学术

Microscopic electroabsorption line shape analysis for Ga(AsSb)∕GaAs heterostructures

Published:2007-02 Issue:3 Volume:101 Page:033118
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Bückers C.,Blume G.,Thränhardt A.,Schlichenmaier C.,Klar P. J.,Weiser G.,Koch S. W.,Hader J.,Moloney J. V.,Hosea T. J. C.,Sweeney S. J.,Wang J.-B.,Johnson S. R.,Zhang Y.-H.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2433715

Reference31 articles.

1. Surface-emitting laser-its birth and generation of new optoelectronics field

2. Design, fabrication, and performance of infrared and visible vertical-cavity surface-emitting lasers

3. Monolithic VCSEL with InGaAsN active region emitting at 1.28 [micro sign]m and CW output power exceeding 500 [micro sign]W at room temperature

4. Single-mode monolithic quantum-dot VCSEL in 1.3 /spl mu/m with sidemode suppression ratio over 30 dB

5. Long wavelength GaAsP∕GaAs∕GaAsSb VCSELs on GaAs substrates for communications applications

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