Room‐temperature epitaxial growth of Ag(110)/GaAs(100) films
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.106983
Reference20 articles.
1. Crystallographic relationships and interfacial properties of Ag on GaAs(100) surfaces
2. Schottky barrier formation of Ag on GaAs(110)
3. Microstructure of epitaxial Ag/Si(111) and Ag/Si(100) interfaces
4. Structure of the Ag/Si(111) surface by scanning tunneling microscopy
5. On the growth of silver on GaAs{001} surfaces
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1. Formation of a one-dimensional grating at the molecular scale by self-assembly of straight silicon nanowires;Applied Physics Letters;2007-06-25
2. Organic-GaAs heterostructure diodes for microwave applications;Applied Surface Science;2004-07
3. XRD investigations of WSiN and LaB6 layers on GaAs;physica status solidi (b);1996-03-01
4. Magnetic Metal Films on Semiconductor Substrates;Ultrathin Magnetic Structures II;1994
5. Structural analysis of epitaxial GaAs on on-axis (100) Si grown by ionized source beam epitaxy;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1993-09
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