XRD investigations of WSiN and LaB6 layers on GaAs
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference16 articles.
1. The interfacial reaction and electrical characteristics of molybdenum-n-GaAs contacts
2. Room‐temperature epitaxial growth of Ag(110)/GaAs(100) films
3. 3% Ti‐Tungsten Diffusion Barriers: II . The Effect of Deposition Temperature and Nitrogen Inclusion
4. The Effects of Growth Sequence on the Electronic Properties of Al-Ge-Ni Ohmic Contacts on (001) GaAs
5. In situ X-ray diffraction study of the effects of germanium and nickel concentrations on melting in gold-based contacts to gallium arsenide
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1. Electronic, thermodynamics and mechanical properties of LaB6 from first-principles;Physica B: Condensed Matter;2018-02
2. The effect of precursor boron nanopowder on the microstructure and emission properties of LaB6cathode materials;physica status solidi (c);2011-09-02
3. XTEM and TFXRD investigations of ohmic Ti/Al/Ti/Au/WSiN contacts on AlGaN/GaN HFET layer systems;Semiconductor Science and Technology;2002-02-18
4. Au/Pt/Ti/Pt base contacts to n-InGaP/p+-GaAs for self-passivating HBT ledge structures;Semiconductor Science and Technology;2000-06-30
5. Low resistance, thermally stable Au/Pt/Ti/WSiN ohmic contacts on n+-InGaAs/n-GaAs layer systems;Journal of Electronic Materials;1998-12
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