Effects on interface barrier energies of metal‐aluminum oxide‐semiconductor (MAS) structures as a function of metal electrode material, charge trapping, and annealing
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1663258
Reference10 articles.
1. Interface Barrier Energy Determination from Voltage Dependence of Photoinjected Currents
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3. Trap structure of pyrolytic Al2O3in MOS capacitors
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