Long wavelength Pb1−xSnxTe homostructure diode lasers having a gallium‐doped cladding layer
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.93927
Reference13 articles.
1. Recent advances in lead-chalcogenide diode lasers
2. Lifetime mechanisms, tunnelling currents and laser thresholds of PbSnTe diode lasers
3. Homojunction lead-tin-telluride diode lasers with increased frequency tuning range
4. V-8 MBE homostructure PbTe diode lasers with CW operation up to 100 K
5. Liquid‐phase‐epitaxy homostructure Pb0.85Sn0.15Te diode laser with controlled carrier concentration
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Diffusion length and lifetime in highly Ga‐doped PbSnTe layers grown by liquid‐phase epitaxy;Journal of Applied Physics;1989-09-15
2. Properties of liquid‐phase epitaxy grown Pb1−xSnxTe homostructure diode lasers with Ga‐doped cladding layer;Journal of Applied Physics;1988-11
3. Temperature dependence of mobility in heavily doped n-type PbTe layers grown by LPE;Physics Letters A;1983-11
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