Lifetime mechanisms, tunnelling currents and laser thresholds of PbSnTe diode lasers
Author:
Publisher
Elsevier BV
Subject
General Engineering
Reference15 articles.
1. Minority carrier lifetimes and lasing thresholds of PbSnTe heterostructure lasers
2. Gain-frequency-current relation for Pb<inf>1-x</inf>Sn<inf>x</inf>Te double heterostructure lasers
3. Recombination in Pb0.83Sn0.17Te at high levels of optical excitation
4. Auger recombination and junction resistance in lead‐tin telluride
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Diffusion length and lifetime in highly Ga‐doped PbSnTe layers grown by liquid‐phase epitaxy;Journal of Applied Physics;1989-09-15
2. Calculation of the refractive indexes of lead chalcogenide salts and its application for injection lasers;IEEE Journal of Quantum Electronics;1985-01
3. Calculation of the refractive index of lead-tin-telluride for infrared devices;IEEE Journal of Quantum Electronics;1984-10
4. Mesa-stripe Pb1-xSnxSe tunable diode lasers;IEEE Journal of Quantum Electronics;1983-10
5. Long wavelength Pb1−xSnxTe homostructure diode lasers having a gallium‐doped cladding layer;Applied Physics Letters;1983-02-15
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