Base‐emitter leakage and recombination current in an implant isolated region of a GaAs/AlGaAs heterojunction bipolar transistor
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.351942
Reference7 articles.
1. GaAlAs/GaAs heterojunction bipolar transistors: issues and prospects for application
2. Millimetre wave performance of carbon-doped-base AlGaAs/GaAs HBTs
3. Implant isolation of GaAs‐AlGaAs heterojunction bipolar transistor structures
4. AlGaAs/GaAs heterojunction bipolar transistors fabricated using a self-aligned dual-lift-off process
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Investigation on base surface recombination in Self Passivated GaAlAs/GaInP/GaAs Heterojunction Bipolar Transistor;The European Physical Journal Applied Physics;1998-10
2. Proton implantation of resonant-tunnelling diode structures;Materials Science and Engineering: B;1995-12
3. High linearity power X-band GaInP/GaAs heterojunction bipolar transistor;IEEE Electron Device Letters;1994-06
4. Current conduction in an implant isolated GaAs/AlGaAs heterostructure;Journal of Applied Physics;1993-12
5. Microwave performance of a self-aligned GaInP/GaAs heterojunction bipolar transistor;IEEE Electron Device Letters;1993-04
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