Epitaxially grown GaAsN random laser
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1568533
Reference19 articles.
1. Electronic Properties of Ga(In)NAs Alloys
2. Monolithic VCSEL with InGaAsN active region emitting at 1.28 [micro sign]m and CW output power exceeding 500 [micro sign]W at room temperature
3. Low threshold current density operation of GaInNAs quantum well lasers grown by metalorganic chemical vapour deposition
4. GaInAsN/GaAs laser diodes operating at 1.52 [micro sign]m
5. Light diffusion with gain and random lasers
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