Magnetostatic effects on switching in small magnetic tunnel junctions
Author:
Affiliation:
1. Physics Department, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213, USA
2. Department of Physics and Astronomy, Johns Hopkins University, Baltimore, Maryland 21218, USA
Funder
Semiconductor Research Corporation (SRC)
Division of Electrical, Communications and Cyber Systems (ECCS)
United States-Israel Binational Science Foundation (BSF)
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4939911
Reference18 articles.
1. Junction size effect on switching current and thermal stability in CoFeB/MgO perpendicular magnetic tunnel junctions
2. Spin torque switching of perpendicular Ta∣CoFeB∣MgO-based magnetic tunnel junctions
3. Magnetization reversal in sub-100 nm magnetic tunnel junctions with ultrathin MgO barrier biased along the hard axis
4. Simulation of electric-field and spin-transfer-torque induced magnetization switching in perpendicular magnetic tunnel junctions
5. Switching current reduction using perpendicular anisotropy in CoFeB–MgO magnetic tunnel junctions
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