Analytical strain relaxation model for Si1−xGex/Si epitaxial layers
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3093889
Reference37 articles.
1. Defects in epitaxial multilayers I. Misfit dislocations
2. Defects associated with the accommodation of misfit between crystals
3. Coherency and Semi-coherency
4. Fabrication technology of SiGe hetero-structures and their properties
5. Low-temperature pathways to Ge-rich Si1−xGex alloys via single-source hydride chemistry
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1. Synthesis of short-wave infrared Ge1−ySny semiconductors directly on Si(100) via ultralow temperature molecular routes for monolithic integration applications;Journal of Vacuum Science & Technology A;2022-12
2. Relaxation Delay of Ge‐Rich Epitaxial SiGe Films on Si(001);physica status solidi (a);2022-07-12
3. Thickness-dependent behavior of strain relaxation and Sn segregation of GeSn epilayer during rapid thermal annealing;Journal of Alloys and Compounds;2022-05
4. Distributions of kinetic pathways in strain relaxation of heteroepitaxial films;Journal of Materials Research;2017-10-11
5. Molecular epitaxy of pseudomorphic Ge1−ySny(y= 0.06–0.17) structures and devices on Si/Ge at ultra-low temperatures via reactions of Ge4H10and SnD4;Semiconductor Science and Technology;2017-01-09
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