Mechanism for pinhole formation in GaN∕AlN∕Si(111) layers from steps at the substrate surface
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1845599
Reference23 articles.
1. From visible to white light emission by GaN quantum dots on Si(111) substrate
2. Growth of InGaN/GaN multiple-quantum-well blue light-emitting diodes on silicon by metalorganic vapor phase epitaxy
3. Distortion compensation characteristics of pre-distortion circuit for private mobile radio
4. High-electron-mobility AlGaN/GaN heterostructures grown on Si(111) by molecular-beam epitaxy
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1. Temperature effect on Al predose and AlN nucleation affecting the buffer layer performance for the GaN-on-Si based high-voltage devices;Japanese Journal of Applied Physics;2019-05-09
2. Buried defects induced by plasma assisted molecular beam epitaxy of AlN and GaN on Silicon;Journal of Crystal Growth;2019-02
3. High-performance GaN-based light emitting diodes grown on 8-inch Si substrate by using a combined low-temperature and high-temperature-grown AlN buffer layer;Journal of Alloys and Compounds;2018-01
4. Investigation of stress, defect structure and electrical conduction in large diameter III-nitride epitaxy on silicon substrates;physica status solidi (c);2015-03-18
5. Influence of 3C–SiC/Si (111) template properties on the strain relaxation in thick GaN films;Journal of Crystal Growth;2014-07
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