Ab initio modeling of boron clustering in silicon
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1313253
Reference27 articles.
1. Ion beams in silicon processing and characterization
2. Transient enhanced diffusion without {311} defects in low energy B+‐implanted silicon
3. Transient enhanced diffusion without {311} defects in low energy B+‐implanted silicon
4. Interactions of ion‐implantation‐induced interstitials with boron at high concentrations in silicon
5. The fraction of substitutional boron in silicon during ion implantation and thermal annealing
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