Optical studies of very high-purity GaAs grown by metal–organic chemical-vapor deposition using a point-of-use arsine (AsH3) generator
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.119647
Reference14 articles.
1. The growth of GaAs, AlGaAs, and selectively doped AlGaAs/GaAs heterostructures by metalorganic vapor phase epitaxy using tertiarybutylarsine
2. Metalorganic vapor phase epitaxy using organic group V precursors
3. Tertiarybutylarsine for Metalorganic Chemical Vapor Deposition Growth of High Purity, High Uniformity Films
4. 2×106 cm2/V s electron mobility by metalorganic chemical vapor deposition with tertiarybutylarsine
5. Growth of InGaAs structures usinginsituelectrochemically generated arsine
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4. Sub-meV photoluminescence linewidth and >106cm2∕Vs electron mobility in AlGaAs∕GaAs quantum wells grown by metalorganic vapor phase epitaxy on slightly misoriented substrates;Journal of Applied Physics;2006-05
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