High-temperature type-II superlattice diode laser at λ=2.9 μm
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.120455
Reference19 articles.
1. Double‐heterostructure diode lasers emitting at 3 μm with a metastable GaInAsSb active layer and AlGaAsSb cladding layers
2. 175 K continuous wave operation of InAsSb/InAlAsSb quantum‐well diode lasers emitting at 3.5 μm
3. High CW power (>200 mW/facet) at 3.4 [micro sign]m from InAsSb/InAlAsSb strained quantum well diode lasers
4. InAsSbP-InAsSb-InAs diode lasers emitting at 3.2 /spl mu/m grown by metal-organic chemical vapor deposition
5. Compressively strained multiple quantum well InAsSb lasers emitting at 3.6 μm grown by metal-organic chemical vapor deposition
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