Energy distribution of gap states in hydrogenated amorphous silicon by post-transit photocurrent spectroscopy: Validity of an indium-tin oxide/silicon oxide double-layer gate-Reference-Cited by-同舟云学术

Energy distribution of gap states in hydrogenated amorphous silicon by post-transit photocurrent spectroscopy: Validity of an indium-tin oxide/silicon oxide double-layer gate

Published:2005-05-15 Issue:10 Volume:97 Page:103707
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Sakata I.,Yamanaka M.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1896097

Reference17 articles.

1. Post-transit time-of-flight currents as a probe of the density of states in hydrogenated amorphous silicon

2. Post-transit photocurrent spectroscopy studies on the gap state distribution in hydrogenated amorphous silicon: Trap occupation problems in leaky junctions and high-defect-density samples

3. Effects of visible light illumination during plasma enhanced chemical vapor deposition growth on the film properties of hydrogenated amorphous silicon

4. Analysis of post‐transit photocurrents and electroluminescence spectra froma‐Si:H solar cells

5. Role of interstitial hydrogen and voids in light-induced metastable defect formation in hydrogenated amorphous silicon: A model

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Investigation of the distribution of localised and extended states in amorphous MoOx;AIP Advances;2018-05

2. Light-induced annealing of hole trap states: A new aspect of light-induced changes in hydrogenated amorphous silicon;Journal of Non-Crystalline Solids;2012-09

3. Effects of oxygen impurity on the energy distribution of gap states in hydrogenated amorphous silicon studied by post-transit photocurrent spectroscopy;Physical Review B;2007-08-10