A study of the deep carrier traps in a Te‐Se‐Cd rectifying structure
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.328325
Reference6 articles.
1. Thermally stimulated currents in epitaxially grown selenium monocrystalline films
2. Electrical forming action in Te-Se-Cd structures
3. Fast capacitance transient appartus: Application to ZnO and O centers in GaP p‐n junctions
4. A study of the deep electron traps in semiconducting CdS
5. Conductance and capacitance studies in GaP Schottky barriers
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Electrical characteristics of an aluminum/amorphous selenium rectifying contact;Solid-State Electronics;1998-10
2. Anomalous behaviour in the capacitance of selenium Schottky diodes;Canadian Journal of Physics;1988-02-01
3. Nontrap capacitance dispersion in Se‐Schottky diodes;Journal of Applied Physics;1987-08
4. Selenium Thin-Film Solar Cell;Japanese Journal of Applied Physics;1984-06-20
5. Reverse characteristics of rectifying TeSeCd structures;Solid-State Electronics;1981-07
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