Comment on ‘‘Current‐voltage characteristics and interface state density of GaAs Schottky barrier’’ [Appl. Phys. Lett.62, 2560 (1993)]
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.112282
Reference21 articles.
1. Current‐voltage characteristics and interface state density of GaAs Schottky barrier
2. Surface States and Barrier Height of Metal‐Semiconductor Systems
3. NonidealJ‐Vcharacteristics and interface states of ana‐Si:H Schottky barrier
4. Analysis of Si Schottky Barrier Characteristics Based on a New Interfacial Layer Model
5. Determination of surface state density in tunnel MOS devices from current-voltage characteristic
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Effects of interface states on the non-stationary transport properties of Schottky contacts and metal-insulator-semiconductor tunnel diodes;Journal of Physics D: Applied Physics;1999-01-01
2. Relation for the nonequilibrium population of the interface states: Effects on the bias dependence of the ideality factor;Journal of Applied Physics;1997-03-15
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