Group V incorporation in InGaAsP grown on InP by gas source molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.361241
Reference13 articles.
1. Gas source molecular beam epitaxy of GaxIn1−xPyAs1−y
2. High quality InP and In1−xGaxAsyP1−y grown by gas source MBE
3. Molecular beam epitaxy of in1-xGaxASyP1-y(y ≃2.2 ×) lattice matched to InP using gas cells
4. Gas-source molecular-beam epitaxial growth of InGaAsP for 1.3 μm distributed Bragg reflectors
5. Growth of high‐quality GaxIn1−xAsyP1−yby chemical beam epitaxy
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