X‐ray photoelectron spectroscopy study of the interfacial reactivity of Si with the oxidized GaAs (100) surface
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.104198
Reference13 articles.
1. Surface structure and interface formation of Si on GaAs(100)
2. Initial stages of heterojunction formation: Si on GaAs(111)
3. Unpinned GaAs MOS capacitors and transistors
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1. Control of the interfacial reaction in HfO2 on Si-passivated GaAs;Applied Surface Science;2013-10
2. Self-catalyzed GaAs nanowire growth on Si-treated GaAs(100) substrates;Journal of Applied Physics;2011-05
3. PASSIVATION INVESTIGATIONS OF GaAs (100) SURFACE;Physics and Technology of Thin Films;2004-06
4. Interface control of Gd2O3/GaAs system using pre-deposition of Gd metal on GaAs substrate with native oxides;Thin Solid Films;2002-12
5. Si-indiffusion and O-outdiffusion processes at Si/SiO2/GaAs-oxides/GaAs structures: Implications in SiO2 formation and GaAs regrowth;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1994-11
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