Isotopic tracing study of the growth of silicon carbide nanocrystals at the SiO2/Si interface by CO annealing
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3173278
Reference20 articles.
1. Opportunities and Technical Strategies for Silicon Carbide Device Development
2. New method for growing silicon carbide on silicon by solid-phase epitaxy: Model and experiment
3. Micropipes and voids at β¨SiC/Si(100) interfaces: an electron microscopy study
4. Thin crystalline 3C-SiC layer growth through carbonization of differently oriented Si substrates
5. Prevention of micropipes and voids at β-SiC/Si(100) interfaces
Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Effects of annealing with CO and CO2 molecules on oxygen vacancy defect density in amorphous SiO2 formed by thermal oxidation of SiC;Journal of Applied Physics;2018-10-07
2. Influence of CO annealing in metal-oxide-semiconductor capacitors with SiO2 films thermally grown on Si and on SiC;Journal of Applied Physics;2016-01-14
3. 3C-SiC nanocrystal growth on 10° miscut Si(001) surface;Thin Solid Films;2014-04
4. Understanding of CO2 interaction with thermally grown SiO2 on Si using IBA depth profiling techniques;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2013-06
5. Optical properties of hybrid T3Pyr/SiO2/3C-SiC nanowires;Nanoscale Research Letters;2012-12
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3