Modeling of the reverse gate leakage in AlGaN/GaN high electron mobility transistors
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3340826
Reference6 articles.
1. Large Gate Leakage Current in AlGaN/GaN High Electron Mobility Transistors
2. Gate leakage current mechanisms in AlGaN/GaN heterostructure field-effect transistors
3. GaN-Based Pyroelectronics and Piezoelectronics
4. Thermionic trap-assisted tunneling model and its application to leakage current in nitrided oxides and AlGaN∕GaN high electron mobility transistors
5. Edge Effects on Gate Tunneling Current in HEMTs
Cited by 19 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Investigation of the DC Performance and Linearity of InAlN/GaN HFETs via Studying the Impact of the Scaling of LGS and LG on the Source Access Resistance;IEEE Journal of the Electron Devices Society;2024
2. The isolation feature geometry dependence of reverse gate-leakage current of AlGaN/GaN HFETs;Physica Scripta;2023-08-09
3. Effect of the post-gate annealing on the gate reliability of AlGaN/GaN HEMTs;Journal of Semiconductors;2021-09-01
4. On-state Leakage Current Modeling in AlGaN/GaN HEMT;2020 5th IEEE International Conference on Emerging Electronics (ICEE);2020-11-26
5. Two-dimensional analytical modelling of drain current collapse in AlGaN/GaN HEMTs using multi-phonon ionisation by an electric field;Semiconductor Science and Technology;2020-07-17
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3