On-state Leakage Current Modeling in AlGaN/GaN HEMT
Author:
Affiliation:
1. Centre for Applied Research in Electronics, IIT,Delhi,India
2. DRDO,Solid State Physics Laboratory (SSPL),New Delhi,India
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9776592/9776648/09776729.pdf?arnumber=9776729
Reference23 articles.
1. Temperature dependence of reverse-bias leakage current in GaN Schottky diodes as a consequence of phonon-assisted tunneling
2. Analysis of Reverse-Bias Leakage Current Mechanisms in Metal/GaN Schottky Diodes
3. Comprehensive study into underlying mechanisms of anomalous gate leakage degradation in GaN high electron mobility transistors
4. On the reverse gate leakage current of AlGaN/GaN high electron mobility transistors
5. On the Origin of Kink Effect in Current–Voltage Characteristics of AlGaN/GaN High Electron Mobility Transistors
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