Bias voltage dependence of the electron spin injection studied in a three-terminal device based on a (Ga,Mn)As∕n+-GaAs Esaki diode
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2219141
Reference17 articles.
1. (Ga,Mn)As: A new diluted magnetic semiconductor based on GaAs
2. Tunneling magnetoresistance in (Ga,Mn)As-based heterostructures with a GaAs barrier
3. Electrical spin injection in a ferromagnetic semiconductor heterostructure
4. A Spin Esaki Diode
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