Two-dimensional dopant concentration profiles from ultrashallow junction metal-oxide-semiconductor field-effect transistors using the etch/transmission electron microscopy method-Reference-Cited by-同舟云学术

Two-dimensional dopant concentration profiles from ultrashallow junction metal-oxide-semiconductor field-effect transistors using the etch/transmission electron microscopy method

Published:2002-04-15 Issue:15 Volume:80 Page:2687-2689
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Yoo K. D.,Marsh C. D.,Booker G. R.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1469652

Reference7 articles.

1. Status and review of two-dimensional carrier and dopant profiling using scanning probe microscopy

2. Characterization of structure/dopant behavior by electron microscopy

3. Physical characterization of two-dimensional doping profiles for process modeling

4. Mapping two-dimensional arsenic distributions in silicon using dopant-selective chemical etching technique

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Advance static random access memory soft fail analysis using nanoprobing and junction delineation transmission electron microscopy;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2007

2. A Study on Lateral Distribution of Implanted Ions in Silicon;Transactions on Electrical and Electronic Materials;2006-08-01

3. Post-annealing sequence effects on the characteristics of 20keV BF2 ion implantation at various ion fluences;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2006-01

4. Study of two-dimensional B doping profile in Si fin field-effect transistor structures by high angle annular dark field in scanning transmission electron microscopy mode;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2006

5. Implantation and post-annealing characteristics when impinging small Bn clusters into silicon at low fluence;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2005-01