Normal‐incidence electroabsorption in Ga1−xAlxSb/AlSbL‐valley quantum wells for 3–5 μm optical modulation
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.354630
Reference22 articles.
1. First observation of an extremely large‐dipole infrared transition within the conduction band of a GaAs quantum well
2. Novel hybrid optically bistable switch: The quantum well self‐electro‐optic effect device
3. Electric field dependence of optical absorption near the band gap of quantum-well structures
4. Calculated quasi‐eigenstates and quasi‐eigenenergies of quantum well superlattices in an applied electric field
5. Observation of Stark shifts in quantum well intersubband transitions
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. In-plane electrical transport in n-type selectively doped GaSb/AlGaSb multiquantum wells;Journal of Applied Physics;2001-11-15
2. Localization at interfaces of imperfect AlSb/InAs heterostructures;Physical Review B;1998-09-15
3. Localized interface states and the optical spectra of AlSb/InAs heterostructures;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1998-07
4. Low pressure metalorganic vapor phase epitaxy and characterization of (Al,Ga)Sb/GaSb heterostructures;Journal of Crystal Growth;1996-10
5. NORMAL-INCIDENCE INTERSUBBAND TRANSITIONS FOR INFRARED ELECTRO-OPTICAL MODULATION AND SECOND-HARMONIC GENERATION;Journal of Nonlinear Optical Physics & Materials;1995-04
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