High stability amorphous-silicon–nitride thin-film diode ring switch
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.120654
Reference8 articles.
1. Reversible conductivity changes in discharge‐produced amorphous Si
2. Defect pool in amorphous-silicon thin-film transistors
3. Current induced drift mechanism in amorphous SiNx:H thin film diodes
4. Plasma-enhanced chemical vapour deposition of amorphous silicon nitride for thin film diode active matrix liquid crystal displays
5. dc-bias stress of non-stochiometric amorphous silicon nitride thin film diodes
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1. Equilibrium viscosity, enthalpy recovery and free volume relaxation in a Zr44Ti11Ni10Cu10Be25 bulk metallic glass;Acta Materialia;2011-06
2. Les verres métalliques massifs : matériaux à faible ou à fort coefficient d’amortissement ?;Revue de Métallurgie;2011
3. An amorphous silicon triode rectifier switching device for active-matrix liquid-crystal display;IEEE Electron Device Letters;2003-02
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