Current induced drift mechanism in amorphous SiNx:H thin film diodes
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.112482
Reference17 articles.
1. Electronic Properties of a-SiNx:H Thin Film Diodes
2. Tunneling effective mass in hydrogenated amorphous silicon
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