Phase-plane analysis and classification of transient regimes for high-field electron transport in nitride semiconductors

Author:

Sokolov V. N.,Kim K. W.,Kochelap V. A.,Woolard D. L.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Impact of traps on current-voltage characteristic of n+-n-n+ diode;Semiconductor Physics Quantum Electronics and Optoelectronics;2017-07-18

2. Magneto transport in crossed electric and magnetic fields in compensated bulk GaN;Journal of Applied Physics;2016-09-07

3. Electron transport in bulk GaN under ultrashort high-electric field transient;Semiconductor Science and Technology;2011-09-06

4. Monte Carlo simulation of hot electron effects in compensated GaN semiconductor at moderate electric fields;Semiconductor physics, quantum electronics and optoelectronics;2008-01-31

5. Negative small-signal impedance of nanoscale GaN diodes in the terahertz frequency regime;Applied Physics Letters;2007-04-02

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