Magneto transport in crossed electric and magnetic fields in compensated bulk GaN
Author:
Affiliation:
1. Institute of Semiconductor Physics, NAS of Ukraine, 41, Prospect Nauky, 03028 Kyiv, Ukraine
2. Institut d'Electronique et des Systèmes (CNRS UMR 5214), University of Montpellier, 860 rue St Priest, 34095 Montpellier Cedex 5, France
Funder
National Academy of Sciences of Ukraine (NASU)
Centre National de la Recherche Scientifique (CNRS)
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4962215
Reference24 articles.
1. High mobility AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy on semi-insulating GaN templates prepared by hydride vapor phase epitaxy
2. Predicted maximum mobility in bulk GaN
3. Investigation of AlGaN∕AlN∕GaN heterostructures for magnetic sensor application from liquid helium temperature to 300°C
4. Hot Electrons in Germanium and Ohm's Law
5. Experimental Determination of the Energy Distribution Functions and Analysis of the Energy-Loss Mechanisms of Hot Carriers inp-Type Germanium
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Diffusion properties of electrons in GaN crystals subjected to electric and magnetic fields;Semiconductor Physics, Quantum Electronics and Optoelectronics;2018-12-03
2. Drift and diffusion high-field magneto-transport in GaN;Journal of Physics: Conference Series;2017-10
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