Epitaxial GeSn film formed by solid phase epitaxy and its application to Yb2O3-gated GeSn metal-oxide-semiconductor capacitors with sub-nm equivalent oxide thickness

Author:

Lee Ching-Wei,Wu Yung-Hsien,Hsieh Ching-Heng,Lin Chia-Chun

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Reference26 articles.

1. Possibility of increased mobility in Ge-Sn alloy system

2. S. Gupta , B. Vincent , B. Yang , D. Lin , F. Gencarelli , J.Y. J. Lin , R. Chen , O. Richard , H. Bender , B. Magyari-Köpe , M. Caymax , J. Dekoster , Y. Nishi , and K. C. Saraswat , in Proceedings of the IEEE International Electron Devices Meeting (IEEE, 2012), p. 375.

3. Hole Mobility Enhancement in Compressively Strained ${\rm Ge}_{0.93}{\rm Sn}_{0.07}$ pMOSFETs

4. Strained germanium–tin (GeSn) p-channel metal-oxide-semiconductor field-effect-transistors (p-MOSFETs) with ammonium sulfide passivation

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