Author:
Lee Ching-Wei,Wu Yung-Hsien,Hsieh Ching-Heng,Lin Chia-Chun
Subject
Physics and Astronomy (miscellaneous)
Reference26 articles.
1. Possibility of increased mobility in Ge-Sn alloy system
2. S. Gupta , B. Vincent , B. Yang , D. Lin , F. Gencarelli , J.Y. J. Lin , R. Chen , O. Richard , H. Bender , B. Magyari-Köpe , M. Caymax , J. Dekoster , Y. Nishi , and K. C. Saraswat , in Proceedings of the IEEE International Electron Devices Meeting (IEEE, 2012), p. 375.
3. Hole Mobility Enhancement in Compressively Strained ${\rm Ge}_{0.93}{\rm Sn}_{0.07}$ pMOSFETs
4. Strained germanium–tin (GeSn) p-channel metal-oxide-semiconductor field-effect-transistors (p-MOSFETs) with ammonium sulfide passivation
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