First-principles study of Ge dangling bonds in GeO2 and correlation with electron spin resonance at Ge/GeO2 interfaces
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3662860
Reference21 articles.
1. Advanced Gate Stacks for High-Mobility Semiconductors
2. Germanium MOSFET Devices: Advances in Materials Understanding, Process Development, and Electrical Performance
3. Ultimate Scaling of CMOS Logic Devices with Ge and III–V Materials
4. Interface traps and dangling-bond defects in (100)Ge∕HfO2
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