Characterization of disordered bonds in Si‐implanted Ga0.47In0.53As with laser Raman spectroscopy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.94104
Reference9 articles.
1. A high gain In0.53Ga0.47As/InP avalanche photodiode with no tunneling leakage current
2. Double heterostructure Ga0.47In0.53As MESFETs by MBE
3. Formation of n-Layer in In0.53Ga0.47As by Si Implantation
4. Disorder-Activated Acoustic Mode in Raman Spectrum ofGaxAl1−xAs
5. Disorder activated Raman scattering in Ga1−xAlxAs alloys
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1. Study of the electrical activation of Si+-implanted InGaAs by means of Raman scattering;Journal of Applied Physics;2003-03
2. Lattice damage study of implanted InGaAs by means of Raman spectroscopy;Journal of Luminescence;2000-05
3. Dynamical properties of Ga1−x InxAs solid solutions: Influence of local distortion effects;Solid State Communications;1993-05
4. Raman scattering of InGaAs/InP grown by uniform radial flow epitaxy;Applied Physics Letters;1992-04-13
5. Characterization of Alloy Semiconductors;Defects and Properties of Semiconductors;1987
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