Study of the electrical activation of Si+-implanted InGaAs by means of Raman scattering
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1542659
Reference15 articles.
1. Ultrafast graded double‐heterostructure GaInAs/InP photodiode
2. High‐performance InGaAs photodetectors on Si and GaAs substrates
3. High-performance InGaAs junction field-effect transistor with P/Be co-implanted gate
4. Be diffusion mechanisms in InGaAs during post‐growth annealing
5. A monolithically integrated InGaAs-InP p-i-n/JFET focal plane array
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1. Indium Composition Dependence of Raman Spectroscopy and Photocurrent of InxGa1−xAs Strained Layers Grown by Using MOCVD;Journal of the Korean Physical Society;2020-02
2. Polarized and spatially resolved Raman scattering from composition-graded wurtzite InGaAs nanowires;Journal of Physics D: Applied Physics;2016-04-01
3. Activation of Si implants into InAs characterized by Raman scattering;Journal of Applied Physics;2016-03-07
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5. Determination of Free Electron Density in Sequentially Doped InxGa1-xAs by Raman Spectroscopy;Applied Spectroscopy;2015-02
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