Identification of the defect dominating high temperature reverse leakage current in vertical GaN power diodes through deep level transient spectroscopy-Reference-Cited by-同舟云学术

Identification of the defect dominating high temperature reverse leakage current in vertical GaN power diodes through deep level transient spectroscopy

Published:2022-01-31 Issue:5 Volume:120 Page:053502
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

DasGupta S.¹^ORCID,Slobodyan O.¹^ORCID,Smith T.¹,Binder A.¹^ORCID,Flicker J.¹,Kaplar R.¹^ORCID,Mueller J.¹,Garcia Rodriguez L.¹^ORCID,Atcitty S.¹

Affiliation:

1. Sandia National Laboratories, Albuquerque, New Mexico 87185, USA

Funder

DOE Office of Electricity - Energy Storage Program

DOE NNSA

DOE Office of Electricity Energy Storage Program

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0082257

Reference26 articles.

1. Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies

2. Semiconductors for high‐voltage, vertical channel field‐effect transistors

3. Comparison of 6H-SiC, 3C-SiC, and Si for power devices

4. Optimum semiconductors for high-power electronics

5. AlGaN/GaN HEMTs-an overview of device operation and applications

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Special topic on Wide- and ultrawide-bandgap electronic semiconductor devices;Applied Physics Letters;2024-08-12

2. Role of trapezoidal defects in enhancing the yellow luminescence of high-Al content n-type AlGaN films;Applied Physics Letters;2024-08-05

3. Mechanical Properties and Damage Evolution Characteristics of Thermal Damage Basalt Under Triaxial Loading;Rock Mechanics and Rock Engineering;2023-11-01

4. Transient photocapacitance spectroscopy on Au/TiO2 Schottky diodes with rolled-up nanomembrane electrodes;Journal of Applied Physics;2023-02-14