Sensitivity of CoSi2 precipitation in silicon to extra-low dopant concentrations. I. Experiment

Author:

Fortuna F.1,Ruault M.-O.1ORCID,Borodin V. A.23,Ganchenkova M. G.3,Kaïtasov O.1

Affiliation:

1. Centre de Sciences Nucléaires et de Sciences de la Matière, bâtiment 108, 91405 Orsay Campus, France

2. NRC “Kurchatov Institute,” Kurchatov Sq., 1, 123182 Moscow, Russia

3. Department of Physical Problems of Materials Science, National Research Nuclear University MEPhI, 115409 Moscow, Russia

Funder

center for scientific computing-Helsinski

NRC/Kurchatov institute

Centre National de la Recherche Scientifique (National Center for Scientific Research)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Reference36 articles.

1. Ion beam synthesis of epitaxial silicides: fabrication, characterization and applications

2. Irradiation induced growth of CoSi2 precipitates in Si at 650°C: An in situ study

3. M. Palard , M.O. Ruault , H. Bernas , M. Strobel , and K.H. Heinig , in Proceedings of Microscopy of Semiconducting Materials, Institute of Physics Conference Series (1997), Vol. 157, p. 501.

4. Ion beam synthesis of CoSi2: Influence of surface kinetics on nucleation

5. Microscopic Mechanisms of Cobalt Disilicide Nucleation in Silicon

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