Chemical insight into origin of forming-free resistive random-access memory devices
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3645623
Reference11 articles.
1. Gd-doping effect on performance of HfO2 based resistive switching memory devices using implantation approach
2. Nanoionics-based resistive switching memories
3. Unified Physical Model of Bipolar Oxide-Based Resistive Switching Memory
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