Organic memory device based on 3,3′-bis-(3,5-di-tert-butyl-4- methoxyphenyl)-2,2′-bithiophene with high endurance and robustness to ambient air operation-Reference-Cited by-同舟云学术

Organic memory device based on 3,3′-bis-(3,5-di-tert-butyl-4- methoxyphenyl)-2,2′-bithiophene with high endurance and robustness to ambient air operation

Published:2006-12-11 Issue:24 Volume:89 Page:243519
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Caironi M.,Natali D.,Sampietro M.,Bertarelli C.,Bianco A.,Dundulachi A.,Canesi E.,Zerbi G.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2408656

Reference21 articles.

1. Material Aspects in Emerging Nonvolatile Memories

2. Nanoelectronic devices from self-organized molecular switches

3. Fabrication approach for molecular memory arrays

4. Nonvolatile memory element based on a ferroelectric polymer Langmuir–Blodgett film

5. A polymer/semiconductor write-once read-many-times memory

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