Degradation of 2DEG transport properties in GaN-capped AlGaN/GaN heterostructures at 600 °C in oxidizing and inert environments-Reference-Cited by-同舟云学术

Degradation of 2DEG transport properties in GaN-capped AlGaN/GaN heterostructures at 600 °C in oxidizing and inert environments

Author:

Hou Minmin¹,Jain Sambhav R.¹,So Hongyun²,Heuser Thomas A.³,Xu Xiaoqing⁴,Suria Ateeq J.⁵^ORCID,Senesky Debbie G.¹⁶

Affiliation:

1. Electrical Engineering, Stanford University, Stanford, California 94305, USA

2. Mechanical Engineering, Hanyang University, Seoul, South Korea

3. Materials Science and Engineering, Stanford University, Stanford, California 94305, USA

4. Stanford Nanofabrication Facility, Stanford University, Stanford, California 94305, USA

5. Mechanical Engineering, Stanford University, Stanford, California 94305, USA

6. Aeronautics and Astronautics, Stanford University, Stanford, California 94305, USA

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

Reference49 articles.

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