Analysis of the dark current in doped‐well multiple quantum well AlGaAs infrared photodetectors
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.343630
Reference8 articles.
1. Bound‐to‐extended state absorption GaAs superlattice transport infrared detectors
2. GaAs/AlGaAs quantum-well, long-wavelength infra-red (LWIR) detector with a detectivity comparable to HgCdTe
3. High‐detectivityD*=1.0×1010cm √H̄z̄/W GaAs/AlGaAs multiquantum well λ=8.3 μm infrared detector
4. Broadband 8–12 μm high‐sensitivity GaAs quantum well infrared photodetector
5. Barrier Height in Indirect Bandgap AlGaAs/GaAs Hetero-Junction Determined with n-Semiconductor/Insulator/Semiconductor Diodes
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1. Investigation of the electro-optical characteristics of GaAs/AlGaAs multiple quantum well grown by metal-organic vapor phase epitaxy;Journal of Molecular Structure;2023-01
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3. Performance analysis of AlGaAs/GaAs/InGaAs-based asymmetric long-wavelength QWIP;Applied Physics A;2019-06-11
4. Effect of doping on the performance of multiple quantum well infrared photodetector;IET Circuits, Devices & Systems;2018-05-10
5. Influence of doping on the performance of GaAs/AlGaAs QWIP for long wavelength applications;Opto-Electronics Review;2016-01-01
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