Influence of doping on the performance of GaAs/AlGaAs QWIP for long wavelength applications-Reference-Cited by-同舟云学术

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Influence of doping on the performance of GaAs/AlGaAs QWIP for long wavelength applications

Published:2016-01-01 Issue:1 Volume:24 Page:
ISSN:1230-3402
Container-title:Opto-Electronics Review
language:
Short-container-title:

Author:

Billaha A.,Das M.K.

Abstract

Effect of doping and other device parameters on inter sub-band transition in the well, responsivity and dark current of GaAs/Al

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Radiation,General Materials Science

Reference27 articles.

1. A self consistent model for quantum well infrared photodetectors;Thibaudeau;Appl Phys,1996

2. De pendence of the performance of GaAs / AlGaAs quantum well infrared photodetectors on doping and bias;Gunapala;Appl Phys

3. Three band Quantum well infrared photodetector using interband and intersubband transitions;Alves;Appl Phys,2008

4. On optimum designs of a RCE Si MQW photodetector for long wavelengh applica tions;Das;Quant Electron,2009

5. Performance limitations of GaAs / AlGaAs infrared superlattices;Kinch;Phys Lett,1989

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