Effects of cesium ion-implantation on mechanical and electrical properties of organosilicate low-k films-Reference-Cited by-同舟云学术

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Effects of cesium ion-implantation on mechanical and electrical properties of organosilicate low-k films

Published:2016-05-16 Issue:20 Volume:108 Page:202901
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Li W.¹^ORCID,Pei D.¹,Guo X.¹,Cheng M. K.¹,Lee S.¹,Lin Q.²,King S. W.³,Shohet J. L.¹^ORCID

Affiliation:

1. Plasma Processing and Technology Laboratory, Department of Electrical and Computer Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, USA

2. IBM T.J. Watson Research Center, Yorktown Heights, New York 10598, USA

3. Intel Corporation, Hillsboro, Oregon 97124, USA

Funder

National Science Foundation (NSF)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://scitation.aip.org/deliver/fulltext/aip/journal/apl/108/20/1.4950717.pdf?itemId=/content/aip/journal/apl/108/20/10.1063/1.4950717&mimeType=pdf&containerItemId=content/aip/journal/apl

Reference21 articles.

1. A. Grill , L. Perraud , V. Patel , C. Jahnes , and S. Cohen , in The MRS Proceedings ( Cambridge University Press, 1999), p. 107.

2. Porous pSiCOH Ultralow-k Dielectrics for Chip Interconnects Prepared by PECVD

3. Progress in the development and understanding of advanced low k and ultralow k dielectrics for very large-scale integrated interconnects—State of the art

4. Porous low dielectric constant materials for microelectronics

5. Plasma processing of low-k dielectrics

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