Improvement of memory performance by high temperature annealing of the Al2O3 blocking layer in a charge-trap type flash memory device
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3442502
Reference10 articles.
1. Photoemission study of energy-band alignments and gap-state density distributions for high-k gate dielectrics
2. Improved Retention for a Al2O3 IPD Embedded Flash Cell without Top-Oxide
3. Optimization of Al2O3 Interpoly Dielectric for Embedded Flash Memory Applications
4. An analytical retention model for SONOS nonvolatile memory devices in the excess electron state
5. Evaluation of the degradation of floating-gate memories with Al2O3 tunnel oxide
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