InAsP phase formations during the growth of a GalnAsP/lnP distributed feedback laser diode structure on corrugated lnP using metalorganic vapor phase epitaxy-Reference-Cited by-同舟云学术

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InAsP phase formations during the growth of a GalnAsP/lnP distributed feedback laser diode structure on corrugated lnP using metalorganic vapor phase epitaxy

Published:1995-06-05 Issue:23 Volume:66 Page:3191-3193
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Jang Dong Hoon,Kim Jeong Soo,Park Kyung Hyun,Nahm Sahn,Lee Seung Won,Lee Jung Kee,Cho Ho Sung,Kim Hong Man,Park Hyung‐Moo

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.113719

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Scatterometry measurement of ingaasp/inp grating for DFB lasers grown with MOVPE;Journal of Crystal Growth;2007-02

2. High device yield and performance of InGaAsP MQW DFB lasers with absorptive grating;Electronics Letters;2007

3. Overgrowth on InP corrugations for 1.55μm DFB LDs by reduction of carrier gas flow in LPMOCVD;Journal of Crystal Growth;2003-10

4. Mass-transport effect on InP corrugation shape control of DFB-LDs under atmospheric pressure MOVPE;Journal of Crystal Growth;1998-12

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