High device yield and performance of InGaAsP MQW DFB lasers with absorptive grating
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_20071458?crawler=true&mimetype=application/pdf
Reference4 articles.
1. Side-mode suppression mechanism of gain-coupled DFB lasers with periodically etched quantum wells
2. High-power, wide-temperature range operation of 1.3-μm gain-coupled DFB lasers with automatically buried InAsP absorptive grating
3. InAsP phase formations during the growth of a GalnAsP/lnP distributed feedback laser diode structure on corrugated lnP using metalorganic vapor phase epitaxy
4. Overgrowth on InP corrugations for 1.55μm DFB LDs by reduction of carrier gas flow in LPMOCVD
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Experimental Study of a Hybrid Small-Signal Parameter Modeling and Extraction Method for a Microoptoelectronic Device;IEEE/ASME Transactions on Mechatronics;2015-12
2. Erratum for ‘High device yield and performance of InGaAsP MQW DFB lasers with absorptive grating’;Electronics Letters;2007
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