Raman scattering study of disordering and alloying of GaAs‐AlAs superlattice by As implantation and rapid thermal annealing
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.96760
Reference6 articles.
1. Implantation disordering of AlxGa1−xAs superlattices
2. Light scattering from vibrational modes inGaAs−Ga1−xAlxAssuperlattices and related alloys
3. The thermodynamic and optical properties of germanium, silicon, diamond and gallium arsenide
4. Study of ion‐implantation damage in GaAs:Be and InP:Be using Raman scattering
5. Raman spectroscopy—A versatile tool for characterization of thin films and heterostructures of GaAs and AlxGa1−xAs
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1. Dielectric response function of GaPAs solid solutions in the vibrational absorption region;Technical Physics;2001-08
2. Raman spectroscopy for characterizing compositional intermixing in GaAs/AlGaAs heterostructures;Applied Physics Letters;1999-06-28
3. Mixing of GaAs/(Ga,Al)As interfaces by Ga+implantation;Journal of Applied Physics;1991-08
4. Raman scattering study of thermal interdiffusion in InGaAs/InP superlattice structures;Journal of Applied Physics;1991-07
5. Raman scattering studies of reactive ion-etched MBE;IEEE Journal of Quantum Electronics;1989-05
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