Si1−yCy/Si(001) gas-source molecular beam epitaxy from Si2H6 and CH3SiH3: Surface reaction paths and growth kinetics
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1555704
Reference29 articles.
1. Solubility of Carbon in Silicon and Germanium
2. Carbon incorporation pathways and lattice sites in Si1−yCy alloys grown on Si(001) by molecular-beam epitaxy
3. Carbon incorporation pathways and lattice sites in Si1−yCy alloys grown on Si(001) by molecular-beam epitaxy
4. Comparison of Si1−yCy films produced by solid-phase epitaxy and rapid thermal chemical vapour deposition
5. On the feasibility of growing dilute CxSi1−xepitaxial alloys
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1. Epitaxy of Si1−xCxvia ultrahigh-vacuum chemical vapor deposition using Si2H6, Si3H8, or Si4H10as Si precursors;Japanese Journal of Applied Physics;2017-08-21
2. Chemical vapor deposition of Si:C and Si:C:P films—Evaluation of material quality as a function of C content, carrier gas and doping;Journal of Crystal Growth;2015-09
3. Gas-source MBE growth of strain-relaxed Si1−xCx on Si(100) substrates;Journal of Crystal Growth;2013-09
4. Characterization of silicon–carbon alloy materials for future strained Si metal oxide semiconductor field effect transistors;Thin Solid Films;2013-02
5. Formation of compressively strained Si/Si1−xCx/Si(100) heterostructures using gas-source molecular beam epitaxy;Journal of Crystal Growth;2013-01
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