Effects and behavior of arsenic during titanium silicidation by halogen lamp annealing
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.338960
Reference15 articles.
1. Development of the Self-Aligned Titanium Silicide Process for VLSI Applications
2. Electronic transport properties of TiSi2 thin films
3. MO/Ti bilayer metallization for a self‐aligned TiSi2 process
4. Titanium silicidation by halogen lamp annealing
5. Pt2Si and PtSi formation with high‐purity Pt thin films
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Growth of Selective Silicon Epitaxy Using Disilane and Chlorine on Heavily Implanted Substrates: II. Role of Implanted Arsenic;Journal of The Electrochemical Society;1999-08-01
2. Silicides;Rapid Thermal Processing;1993
3. Auger electron spectroscopy and Rutherford backscattering characterization of TiNx/TiSiy contact barrier metallization;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1991-01
4. Rapid Thermal Process Integration;Reduced Thermal Processing for ULSI;1989
5. Behaviour of implanted arsenic during rapid thermal annealing of Ti on Si;Applied Physics A Solids and Surfaces;1987-11
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