Low voltage performance of epitaxial BiFeO3 films on Si substrates through lanthanum substitution-Reference-Cited by-同舟云学术

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Low voltage performance of epitaxial BiFeO3 films on Si substrates through lanthanum substitution

Published:2008-03-10 Issue:10 Volume:92 Page:102909
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Chu Y. H.,Zhan Q.,Yang C.-H.,Cruz M. P.,Martin L. W.,Zhao T.,Yu P.,Ramesh R.,Joseph P. T.,Lin I. N.,Tian W.,Schlom D. G.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2897304

Reference14 articles.

1. Electric polarization reversal and memory in a multiferroic material induced by magnetic fields

2. Multiferroic and magnetoelectric materials

3. Epitaxial BiFeO3 thin films on Si

4. Room temperature exchange bias and spin valves based on BiFeO3∕SrRuO3∕SrTiO3∕Si (001) heterostructures

5. Bi1−xRxFeO3 (R=rare earth): a family of novel magnetoelectrics

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