Characteristics of an indium antimonide metal-insulator-semiconductor structure prepared by remote plasma enhanced chemical vapor deposition
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.365697
Reference16 articles.
1. A fully monolithic InSb infrared CCD array
2. Technology development for InSb infrared imagers
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4. Surface Study of Anodized Indium Antimonide
5. Origin and effects of interface traps in anodic native oxides on InSb
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