Influence of Deposition Temperature on Composition and Growth Rate of GaAsx P1−x Layers
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1661533
Reference5 articles.
1. The Preparation and Properties of Vapor-Deposited Epitaxial GaAs[sub 1−x]P[sub x] Using Arsine and Phosphine
2. The Preparation and Properties of Vapor-Deposited Epitaxial InAs[sub 1−x]P[sub x] Using Arsine and Phosphine
3. Preparation of GaAs[sub x]P[sub 1−x] by Vapor Phase Reaction
4. Epitaxial GaAs Kinetic Studies: {001} Orientation
5. Mass Spectrometric Studies of Vapor Phase Crystal Growth
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